What is oxide charge

By definition, the oxidation number of an atom is the charge that atom would have if the compound was composed of ions. The oxidation number of an atom is zero in a neutral substance that contains atoms of only one element. Thus, the atoms in O 2 , O 3 , P 4 , S 8 , and aluminum metal all have an oxidation number of 0. The oxidation number of simple ions is equal to the charge on the ion.

The oxidation number of hydrogen is -1 when it is combined with a metal as in. Oxygen usually has an oxidation number of The sum of the oxidation numbers in a polyatomic ion is equal to the charge on the ion.

Elements toward the bottom left corner of the periodic table are more likely to have positive oxidation numbers than those toward the upper right corner of the table. Construction Technologies and Architecture. Building Materials. General Engineering. Mechanical Engineering.

Bioscience and Medicine. Civil Engineering. Information Technologies. Industrial Engineering. Environmental Engineering. Foundations of Materials Science and Engineering. Specialized Collections. Retrospective Collection. Home Fixed Oxide Charge. Papers by Keyword: Fixed Oxide Charge. Paper Title Page. Abstract: The influences of positive fixed oxide charges and donor-like interface traps on breakdown voltages of SiC devices with FGR and JTE terminations were studied. The introduction of donor-like interface traps at the interface shows similar behaviors as fixed positive charges, suggested that both fixed oxide charges and interface traps should be taken into account when one optimizes device designs and processes.

Abstract: The fundamental aspects of thermal oxidation and oxide interface grown on 4H-SiC Si-face and C-face substrates were investigated by means of high-resolution x-ray photoelectron spectroscopy XPS using synchrotron radiation together with electrical measurements of SiC-MOS capacitors.

We found that, for both cases, there existed no distinct C-rich transition layer despite the literature. In contrast, atomic scale roughness causing degradation of SiC-MOS devices, such as negative fixed charge and electrical defects just at the oxide interface, was found to be introduced as thermal oxidation progressed, especially for the C-face substrate.

Authors: D. Effective negative fixed oxide charge decreased with increasing anneal temperature in the case annealed with Al gate electrodes. However, it increased with increasing anneal temperature in the case annealed without Al gate electrodes.

The effect of annealing was much larger on the C-face than that of Si-face. Interface state densities near the conduction band edge was decreased at oC under 1. Abstract: The structure and electrical properties of ZrO2 dielectric thin films deposited by rf magnetron sputtering were investigated.

Annealing treatment also enhances the quality of the film by reducing leakage current.