What type of semiconductor is gallium arsenide

Gallium arsenide GaAs is a compound of gallium and arsenic. It is a vital semiconductor and is commonly used to manufacture devices such as infrared emitting diodes, laser diodes, integrated circuits at microwave frequencies, and photovoltaic cells. Structure of Gallium arsenide GaAs Wafer. In the Gallium arsenide GaAs Wafer , each gallium atom is bordered by arsenic atoms. So, each of the gallium and arsenic atom gets 8 valence electrons in the outer shell.

It is also to be noted that a covalent bond exists between gallium and arsenic atom in the GaAs Wafer. The covalent bonds despite being strong can be broken with an enough amount of external energy.

Properties of GaAs Wafer. The main properties of gallium arsenide GaAs are given below:. Use of GaAs Wafers. The main use of gallium arsenide GaAs is found in:.

The physical and chemical properties of GaAs complicate its use in the manufacturing of transistors by being a binary composite with a lower thermal conductivity and a higher coefficient of thermal expansion CTE , while silicon and germanium are elementary semiconductors. In addition, failures in devices based on GaAs are more difficult to understand than those in silicon and can be more expensive, due to its recent use.

But comparing the relationship, quality, and price, the added value of GaAs offsets manufacturing costs. The indicated markets are in continuous growth, which demand the technology that allows higher frequencies, which help reducing the costs.

Gallium arsenide has been incorporated into commercial markets since its use began for the military and aerospace field.

It belongs to the semiconductor materials group in the periodic table. The width of the band gap is greater than in silicon or germanium. Gallium Arsenide GaAs. Jars, pails, drums. Buying Info. Request a Quote. Find what you're looking for? Connect With Us. Group IV elements such as silicon can act as either donors that is, on Ga sites or acceptors that is, on As sites. Since arsenic is smaller than gallium and silicon the covalent radius for Ga is 1.

Thus, silicon is used as the dopant for the formation of n-type material as shown in the figure below. The shrinkage of atomic radii across a given row of the periodic table can best be explained by noting that in any given period, electrons are added to s and p orbitals, which are not able to shield each other effectively from the increasing positive nuclear charge. Thus an increase in the positive charge of the nucleus results in an increase in the effective nuclear charge, thereby decreasing the effective, atomic radius.

This is why, for example, an As atom is smaller than a Ga atom. Beryllium Be or magnesium group II can be used for the formation of p-type material. Since Be is the lightest p-type dopant for GaAs, deep implantation of the dopant atoms can be accompiished with relatively less lattice damage.